UF4SC120023K4S
UnitedSiC
UnitedSiC
1200V/23MOHM SIC STACKED FAST CA
$32.33
Available to order
Reference Price (USD)
1+
$32.33000
500+
$32.0067
1000+
$31.6834
1500+
$31.3601
2000+
$31.0368
2500+
$30.7135
Exquisite packaging
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Discover the UF4SC120023K4S from UnitedSiC, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the UF4SC120023K4S ensures reliable performance in demanding environments. Upgrade your circuit designs with UnitedSiC's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 385W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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