UFZVFHTE-175.6B
Rohm Semiconductor
Rohm Semiconductor
DIODE ZENER 5.6V 500MW UMD2
$0.33
Available to order
Reference Price (USD)
3,000+
$0.04600
6,000+
$0.04000
15,000+
$0.03400
30,000+
$0.03200
75,000+
$0.03000
150,000+
$0.02800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UFZVFHTE-175.6B by Rohm Semiconductor is a premium single Zener diode, part of the Discrete Semiconductor Products range. This diode is crafted for precision and reliability, offering features like excellent temperature stability and low reverse leakage current. It is ideal for applications requiring consistent voltage regulation, such as in power supplies for LED lighting and audio amplifiers. The UFZVFHTE-175.6B is also a key component in telecommunications infrastructure, where it maintains signal integrity by stabilizing voltage levels. Furthermore, it is used in renewable energy systems, such as solar panels and wind turbines, to protect against voltage spikes and ensure efficient energy conversion.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 5.6 V
- Tolerance: ±2.5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 13 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
Related Products
Vishay General Semiconductor - Diodes Division
GDZ20B-HE3-18
Microchip Technology
CDLL4370
Vishay General Semiconductor - Diodes Division
BZX384C36-E3-08
onsemi
MMSZ4V7T3G
Microchip Technology
JANTXV1N980BUR-1/TR
Vishay General Semiconductor - Diodes Division
BZD27B11P-HE3-08
NTE Electronics, Inc
NTE136A
Vishay General Semiconductor - Diodes Division
BZT52B11-HE3-08
Vishay General Semiconductor - Diodes Division
BZX384B68-HE3-08
Panjit International Inc.