Shopping cart

Subtotal: $0.00

UG06B

Taiwan Semiconductor Corporation
UG06B Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
$0.10
Available to order
Reference Price (USD)
1+
$0.10173
500+
$0.1007127
1000+
$0.0996954
1500+
$0.0986781
2000+
$0.0976608
2500+
$0.0966435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

SS5P3-M3/86A

Comchip Technology

CDBB560-HF

Vishay General Semiconductor - Diodes Division

SGL41-40HE3/97

Vishay General Semiconductor - Diodes Division

VSS8D3M12-M3/I

Microchip Technology

JANTX1N6638

Vishay General Semiconductor - Diodes Division

V12P15HM3/H

Diodes Incorporated

S2KDF-13

STMicroelectronics

STPS4S200UFN

Vishay General Semiconductor - Diodes Division

S1AFK-M3/6B

Micro Commercial Co

SR203-TP

Top