Shopping cart

Subtotal: $0.00

UG06CHA1G

Taiwan Semiconductor Corporation
UG06CHA1G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 600MA TS-1
$0.00
Available to order
Reference Price (USD)
12,000+
$0.10875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Diodes Incorporated

B320A-13

STMicroelectronics

STPS1L40MF

Taiwan Semiconductor Corporation

SR106HB0G

Vishay General Semiconductor - Diodes Division

SS3H10HE3_A/I

Microsemi Corporation

MS108/TR12

Rohm Semiconductor

RLS-73TE-11

Vishay General Semiconductor - Diodes Division

8ETL06-1

Vishay General Semiconductor - Diodes Division

VS-10MQ100NPBF

Diodes Incorporated

APD140VD-E1

Diodes Incorporated

1N5818-B

Top