UGB8DTHE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
$0.73
Available to order
Reference Price (USD)
1+
$0.72600
500+
$0.71874
1000+
$0.71148
1500+
$0.70422
2000+
$0.69696
2500+
$0.6897
Exquisite packaging
Discount
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The UGB8DTHE3_A/P from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's UGB8DTHE3_A/P for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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