UH2CHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2A DO214AA
$0.00
Available to order
Reference Price (USD)
6,400+
$0.22982
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UH2CHE3_A/I by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The UH2CHE3_A/I is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the UH2CHE3_A/I delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 150 V
- Capacitance @ Vr, F: 42pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Taiwan Semiconductor Corporation
BAT43 A0G
GeneSiC Semiconductor
MBRH30045L
Vishay General Semiconductor - Diodes Division
BY229-800HE3/45
Taiwan Semiconductor Corporation
GPA805HC0G
Vishay General Semiconductor - Diodes Division
US1MHE3/5AT
Taiwan Semiconductor Corporation
SS29L RTG
Vishay General Semiconductor - Diodes Division
HFA08TB120
NXP USA Inc.
BAT54J
Taiwan Semiconductor Corporation
SFAF501GHC0G
Vishay General Semiconductor - Diodes Division