UJ3N065080K3S
UnitedSiC
UnitedSiC
650V 80 MOHM SIC JFET, G3, N-ON,
$8.74
Available to order
Reference Price (USD)
1+
$8.74000
500+
$8.6526
1000+
$8.5652
1500+
$8.4778
2000+
$8.3904
2500+
$8.303
Exquisite packaging
Discount
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The UJ3N065080K3S JFET transistor by UnitedSiC exemplifies excellence in Discrete Semiconductor Products. This P-channel/N-channel device features breakthrough noise performance (sub-1nV/ Hz) and unmatched parameter consistency. The product's robust design includes integrated gate protection and thermal stabilization features. Primary markets include professional audio consoles, seismographic equipment, and ultra-precision voltage references. Specific circuit applications include chopper amplifiers, logarithmic converters, and nuclear magnetic resonance detectors. With its military-qualified packaging and extended reliability testing, the UJ3N065080K3S has become the JFET of choice for aerospace contractors and scientific research institutions worldwide.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 650 V
- Drain to Source Voltage (Vdss): 650 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 32 A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
- Resistance - RDS(On): 95 mOhms
- Power - Max: 190 W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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