UNR511E00L
Panasonic Electronic Components
Panasonic Electronic Components
TRANS PREBIAS PNP 150MW SMINI3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, UNR511E00L offers unmatched convenience. Panasonic Electronic Components's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
Related Products
NXP USA Inc.
PDTC114ES,126
Infineon Technologies
BCR112WE6327BTSA1
onsemi
MUN2213JT1
onsemi
FJN4312RBU
Infineon Technologies
BCR 164F E6327
NXP USA Inc.
PDTA113EK,115
NXP USA Inc.
PDTA114TEF,115
Micro Commercial Co
DTC144TKA-TP
Toshiba Semiconductor and Storage
RN2101CT(TPL3)
NXP USA Inc.