UPA1816GR-9JG-E1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 12V 9A 8TSSOP
$0.58
Available to order
Reference Price (USD)
1+
$0.58000
500+
$0.5742
1000+
$0.5684
1500+
$0.5626
2000+
$0.5568
2500+
$0.551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the UPA1816GR-9JG-E1-A single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the UPA1816GR-9JG-E1-A combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 15mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Related Products
onsemi
FDS6575
onsemi
FDD6670A
Fairchild Semiconductor
HUF76129S3S
Diodes Incorporated
ZVP4424ASTZ
Infineon Technologies
SPA11N80C3XKSA1
Sanken
FKI07076
Diodes Incorporated
DMT3006LDK-7
Rohm Semiconductor
RQ5A025ZPTL
Diodes Incorporated
DMT2004UFDF-7
onsemi