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UPA1912TE(0)-T1-AT

Renesas Electronics America Inc
UPA1912TE(0)-T1-AT Preview
Renesas Electronics America Inc
MOSFET P-CH 12V 4.5A SC95
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-95
  • Package / Case: SC-95

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