UPA2379T1P-E1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET 2N-CH 12V
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Elevate your electronics with the UPA2379T1P-E1-A from Renesas Electronics America Inc, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the UPA2379T1P-E1-A provides the reliability and efficiency you need. Renesas Electronics America Inc's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.8W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFLGA
- Supplier Device Package: 6-EFLIP-LGA (2.17x1.47)
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