UPA2380T1P-E4-A
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH DUAL LGA
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Enhance your circuit designs with the UPA2380T1P-E4-A, a premium Transistors - FETs, MOSFETs - Arrays product from Renesas Electronics America Inc. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the UPA2380T1P-E4-A delivers consistent and reliable operation. Renesas Electronics America Inc's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 32.5mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 10V
- Power - Max: 1.15W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFLGA
- Supplier Device Package: 4-EFLIP-LGA (1.11x1.11)
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