UPA2600T1R-E2-AX
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 20V 7A 6HUSON
$0.00
Available to order
Reference Price (USD)
9,000+
$0.18488
15,000+
$0.17850
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UPA2600T1R-E2-AX by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 19.1mOhm @ 3.5A, 2.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-WFDFN Exposed Pad
Related Products
Infineon Technologies
SIPC03N60C3X1SA1
Infineon Technologies
IRFC4019EB
NXP USA Inc.
PSMN2R2-30YLC/GFX
Central Semiconductor Corp
CET3906EVL TR
Harris Corporation
IRF612
Rohm Semiconductor
R6035ENZC17
onsemi
NVMFS6B25NLWFT1G
Renesas Electronics America Inc
2SK3484(0)-Z-E1-AZ
Infineon Technologies
94-4849PBF
Alpha & Omega Semiconductor Inc.