UPA2630T1R-E2-AX
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 12V 7A 6HUSON
$0.00
Available to order
Reference Price (USD)
9,000+
$0.21286
15,000+
$0.20552
Exquisite packaging
Discount
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Upgrade your designs with the UPA2630T1R-E2-AX by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the UPA2630T1R-E2-AX is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 1.8V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-WFDFN Exposed Pad
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