UPA2706GR-E2-AT
Renesas
Renesas
UPA2706GR-E2-AT - MOS FIELD EFFE
$1.07
Available to order
Reference Price (USD)
1+
$1.07161
500+
$1.0608939
1000+
$1.0501778
1500+
$1.0394617
2000+
$1.0287456
2500+
$1.0180295
Exquisite packaging
Discount
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Meet the UPA2706GR-E2-AT by Renesas, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The UPA2706GR-E2-AT stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 15W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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