UPA2765T1A-E2-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 100A 8HVSON
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the UPA2765T1A-E2-AY by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the UPA2765T1A-E2-AY is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 32A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 83W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HVSON (5x5.4)
- Package / Case: 8-PowerVDFN
Related Products
IXYS
IXTM15N60
IXYS
IXFL39N90
onsemi
NTLJS14D0P03P8ZTAG
Central Semiconductor Corp
CP398X-CPDM303NH-WN
onsemi
SCP114AMX180TCG
Renesas Electronics America Inc
N0100P-T1-AT
Microsemi Corporation
JANTXV2N6849
Microsemi Corporation
APTM120SK68T1G
Rohm Semiconductor
RAQ045P01MGTCR
Microsemi Corporation