UPA2813T1L-E2-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 30V 27A 8HWSON
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Optimize your power electronics with the UPA2813T1L-E2-AT single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the UPA2813T1L-E2-AT combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerVDFN
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