UPA2820T1S-E2-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 8HVSON
$0.00
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Reference Price (USD)
5,000+
$0.45990
Exquisite packaging
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Discover the UPA2820T1S-E2-AT from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the UPA2820T1S-E2-AT ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 16W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
