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UPA2820T1S-E2-AT

Renesas Electronics America Inc
UPA2820T1S-E2-AT Preview
Renesas Electronics America Inc
MOSFET N-CH 30V 8HVSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.45990
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 16W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN

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