UPA2825T1S-E2-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 8HVSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.47600
Exquisite packaging
Discount
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Upgrade your designs with the UPA2825T1S-E2-AT by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the UPA2825T1S-E2-AT is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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