UPA650TT-E1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 12V 5A 6WSOF
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UPA650TT-E1-A from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the UPA650TT-E1-A offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSOF
- Package / Case: 6-SMD, Flat Leads
Related Products
STMicroelectronics
STF24N60M6
Nexperia USA Inc.
PHP79NQ08LT,127
Infineon Technologies
IRLML5103TRPBF
IXYS
IXFH14N80P
Nexperia USA Inc.
BUK7Y1R7-40HX
STMicroelectronics
STF20N60M2-EP
Microchip Technology
APT30M85BVRG
IXYS
IXFN32N100P
STMicroelectronics
STP16NF06L
IXYS