UPD48576209F1-E24-DW1-E2-A
Renesas
Renesas
UPD48576209 - DDR DRAM, 0.24NS
$53.28
Available to order
Reference Price (USD)
1+
$53.28000
500+
$52.7472
1000+
$52.2144
1500+
$51.6816
2000+
$51.1488
2500+
$50.616
Exquisite packaging
Discount
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The UPD48576209F1-E24-DW1-E2-A from Renesas is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the UPD48576209F1-E24-DW1-E2-A ensures longevity and consistent performance in various environments.
Memory ICs like the UPD48576209F1-E24-DW1-E2-A are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the UPD48576209F1-E24-DW1-E2-A delivers unmatched reliability and efficiency.
The UPD48576209F1-E24-DW1-E2-A is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: LLDRAM
- Memory Size: 576Mb (64M x 9)
- Memory Interface: HSTL
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 144-TBGA
- Supplier Device Package: 144-TFBGA (11x18.5)