US1J R3G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
$0.57
Available to order
Reference Price (USD)
1+
$0.57000
500+
$0.5643
1000+
$0.5586
1500+
$0.5529
2000+
$0.5472
2500+
$0.5415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The US1J R3G by Taiwan Semiconductor Corporation is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the US1J R3G ensures long-term reliability even in harsh operating conditions. Trust Taiwan Semiconductor Corporation for cutting-edge semiconductor solutions that drive innovation.
Specifications
- Product Status: Discontinued at Digi-Key
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Microchip Technology
JANS1N5806US/TR
Vishay General Semiconductor - Diodes Division
VS-MBRD330TRR-M3
Sanken
EM01AV1
Vishay General Semiconductor - Diodes Division
VS-E5PH7512L-N3
Rohm Semiconductor
RBR10T30ANZC9
Microchip Technology
1N647UR-1/TR
Panjit International Inc.
UF2G_R1_00001
Vishay General Semiconductor - Diodes Division
VS-5EWH06FNTR-M3
Vishay General Semiconductor - Diodes Division
NS8GT-E3/45
STMicroelectronics