V20120S-E3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO220AB
$1.30
Available to order
Reference Price (USD)
1,000+
$0.61796
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The V20120S-E3/4W by Vishay General Semiconductor - Diodes Division is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the V20120S-E3/4W ensures long-term reliability even in harsh operating conditions. Trust Vishay General Semiconductor - Diodes Division for cutting-edge semiconductor solutions that drive innovation.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 120 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Sanken
SJPJ-L3V
onsemi
BAS16TT1G
Vishay General Semiconductor - Diodes Division
SS10PH9-M3/87A
Diodes Incorporated
DTH8S06FP
Taiwan Semiconductor Corporation
1N5408G R0G
onsemi
SS13HE
Central Semiconductor Corp
CLL914 TR13 PBFREE
SMC Diode Solutions
MBRB1635
Rohm Semiconductor
RB068LAM100TFTR
Taiwan Semiconductor Corporation