V30M100M-E3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 15A 100V TO-220AB
$0.60
Available to order
Reference Price (USD)
3,000+
$0.59055
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance V30M100M-E3/4W from Vishay General Semiconductor - Diodes Division, a premium diode rectifier array designed for efficient power conversion in demanding applications. As part of the Discrete Semiconductor Products category, this diode array ensures reliable rectification with low forward voltage drop and high surge current capability. Ideal for power supplies, motor controls, and inverters, the V30M100M-E3/4W delivers exceptional durability and thermal performance. Whether you're designing industrial equipment or automotive electronics, trust Vishay General Semiconductor - Diodes Division's cutting-edge technology for superior efficiency and longevity.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 100 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
Panjit International Inc.
SBM1660VCT_T0_00001
Vishay General Semiconductor - Diodes Division
VBT3045CBP-E3/4W
Vishay General Semiconductor - Diodes Division
VIT1080C-M3/4W
STMicroelectronics
STTH3002CG
STMicroelectronics
STPS20S100CFP
Infineon Technologies
BAT5404WH6327XTSA1
Infineon Technologies
BAV 70S H6327
GeneSiC Semiconductor
MUR2X060A02
Nexperia USA Inc.
PNE200100CPEZ
SMC Diode Solutions