V8PAM12-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 8A DO221BC
$0.58
Available to order
Reference Price (USD)
14,000+
$0.16800
Exquisite packaging
Discount
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The V8PAM12-M3/I from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the V8PAM12-M3/I meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 120 V
- Capacitance @ Vr, F: 730pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
- Supplier Device Package: DO-221BC (SMPA)
- Operating Temperature - Junction: -40°C ~ 175°C
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