VB20120C-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 120V TO-263AB
$0.87
Available to order
Reference Price (USD)
3,000+
$0.74214
Exquisite packaging
Discount
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Meet the VB20120C-M3/4W - Vishay General Semiconductor - Diodes Division's advanced solution in the Diodes - Rectifiers - Arrays segment. This high-speed rectifier array boasts ultra-low recovery time, significantly reducing power loss in switching applications. From server power supplies to LED lighting drivers and electric vehicle charging stations, this component ensures energy-efficient operation. Vishay General Semiconductor - Diodes Division combines innovative silicon technology with rigorous testing to deliver diode arrays that outperform in reliability and thermal management.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 120 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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