VB60170G-E3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60A 170V TO-263AB
$3.84
Available to order
Reference Price (USD)
1+
$3.79000
50+
$3.26560
100+
$2.87070
500+
$2.48874
1,000+
$2.14638
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuitry with the VB60170G-E3/4W by Vishay General Semiconductor - Diodes Division, a top-tier rectifier diode array from the Diodes - Rectifiers - Arrays subcategory. Engineered for precision and reliability, this component features fast switching and high current capacity, making it perfect for AC/DC conversion and voltage regulation. Common applications include welding machines, battery chargers, and renewable energy systems. With Vishay General Semiconductor - Diodes Division's commitment to quality, the VB60170G-E3/4W stands out as a robust solution for engineers seeking optimal performance in harsh environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 170 V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 450 µA @ 170 V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
Micro Commercial Co
MMBD4448HSDW-TP
SanRex Corporation
DD300KB80
Panjit International Inc.
MBR30200FCT_T0_00001
SMC Diode Solutions
MBR60150CT
Vishay General Semiconductor - Diodes Division
BAS70-04-E3-08
Diodes Incorporated
SBR30100CT
Taiwan Semiconductor Corporation
UG1008GH
Taiwan Semiconductor Corporation
MBR20200CTH
Vishay General Semiconductor - Diodes Division
VS-HFA32PA120C-N3
Panjit International Inc.