VBT10202C-M3/8W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 200V 10A TO263AB
$0.86
Available to order
Reference Price (USD)
3,200+
$0.85070
Exquisite packaging
Discount
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Engineered for excellence, Vishay General Semiconductor - Diodes Division's VBT10202C-M3/8W represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Vishay General Semiconductor - Diodes Division's proprietary screening processes, the VBT10202C-M3/8W guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 200 V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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