VBT2060C-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 60V TO-263AB
$0.84
Available to order
Reference Price (USD)
3,000+
$0.71638
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VBT2060C-M3/4W rectifier array from Vishay General Semiconductor - Diodes Division redefines efficiency in the Diodes - Rectifiers - Arrays classification. Its optimized chip geometry enables higher surge withstand capability, critical for automotive alternators and arc suppression circuits. This product shines in three-phase rectification and snubber networks, offering aerospace-grade reliability. Vishay General Semiconductor - Diodes Division's precision manufacturing ensures each VBT2060C-M3/4W meets stringent quality standards for mission-critical applications.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 850 µA @ 60 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
IXYS
DSEP2X60-12A
Diodes Incorporated
SBR10U150CTFP
STMicroelectronics
BAS70-04WFILM
Yangzhou Yangjie Electronic Technology Co.,Ltd
MBR10200CDS-F1-0000HF
Vishay General Semiconductor - Diodes Division
VIT30L60C-E3/4W
onsemi
MMBD1505A
Rohm Semiconductor
RB088BM200TL
Panjit International Inc.
SD1030CS_S2_00001
onsemi
BAV70TT1
GeneSiC Semiconductor