VBT2060G-E3/8W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 10A 60V TO-263AB
$0.43
Available to order
Reference Price (USD)
1,600+
$0.39405
Exquisite packaging
Discount
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The VBT2060G-E3/8W from Vishay General Semiconductor - Diodes Division is a standout in the Discrete Semiconductor Products family, offering unmatched rectification efficiency in compact diode arrays. Designed for high-density PCB layouts, this product excels in bridge rectifiers and polarity protection circuits. Its low leakage current and high-temperature stability make it a favorite for telecommunications, consumer electronics, and medical devices. Choose Vishay General Semiconductor - Diodes Division's VBT2060G-E3/8W for applications where space-saving design meets industrial-grade reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 60 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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