VMMBZ33C1DD1HG3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
28V;IR=0.1UA;IP=1.7A;P=100W;CD=1
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
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Optimize your circuit protection with the VMMBZ33C1DD1HG3-08 TVS diode from Vishay General Semiconductor - Diodes Division. This diode excels in clamping transient voltages and ensuring system integrity. TVS diodes are crucial in applications ranging from consumer electronics to military hardware. They provide robust defense against voltage surges, such as those caused by lightning or switching loads. For example, the VMMBZ33C1DD1HG3-08 can protect military communication systems from transient interference. Vishay General Semiconductor - Diodes Division offers top-grade TVS diodes engineered for superior performance and reliability.
Specifications
- Product Status: Active
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 28V (Max)
- Voltage - Breakdown (Min): 32.7V
- Voltage - Clamping (Max) @ Ipp: 59V
- Current - Peak Pulse (10/1000µs): 300mA
- Power - Peak Pulse: 15W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: 8pF @ 1MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: DFN1006-2B
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Vishay General Semiconductor - Diodes Division