VS-10CWH02FNTR-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 10A TO252AA
$1.01
Available to order
Reference Price (USD)
2,000+
$0.45200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-10CWH02FNTR-M3 from Vishay General Semiconductor - Diodes Division sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Vishay General Semiconductor - Diodes Division's rigorous quality control ensures the VS-10CWH02FNTR-M3 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 21 ns
- Current - Reverse Leakage @ Vr: 4 µA @ 200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
Related Products
Phoenix Contact
2952790
Yangzhou Yangjie Electronic Technology Co.,Ltd
MBR1060CT-B1-0000HF
STMicroelectronics
STTH30R03CW
GeneSiC Semiconductor
MURT30040
Rohm Semiconductor
RRE04EA6DTR
Vishay General Semiconductor - Diodes Division
VS-MURB1620CT-1HM3
Rohm Semiconductor
RFN16T2DNZC9
onsemi
MBR30H100CTG
Diodes Incorporated
SBR20100CT-G
Diodes Incorporated