VS-10ETF12FP-M3

Vishay General Semiconductor - Diodes Division

Manufacturer

Vishay General Semiconductor - Diodes Division

Description:

DIODE GEN PURP 1.2KV 10A TO220FP

Datasheet:

VS-10ETF12FP-M3 Datasheet

$2.85

Available to order

Reference Price (USD)

1,000+

$2.64093

Exquisite packaging

Discount

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The VS-10ETF12FP-M3 from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's VS-10ETF12FP-M3 for superior performance and durability in demanding environments.

Specifications

Product Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C

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VS-10ETF12FP-M3

Reference Price (USD)

Specifications

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