VS-16CTQ100S-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 8A D2PAK
$1.79
Available to order
Reference Price (USD)
1,000+
$0.92720
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-16CTQ100S-M3 from Vishay General Semiconductor - Diodes Division sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Vishay General Semiconductor - Diodes Division's rigorous quality control ensures the VS-16CTQ100S-M3 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 8A
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 550 µA @ 100 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
Infineon Technologies
DD285N02KHPSA1
Infineon Technologies
DD600S65K3NOSA1
onsemi
RURD620CCS9A-F085
GeneSiC Semiconductor
MBRT60035
Vishay General Semiconductor - Diodes Division
V20100C-M3/4W
SMC Diode Solutions
63CNQ080SL
GeneSiC Semiconductor
MURTA40060R
Infineon Technologies
BAS40-07WH6327
Diodes Incorporated
SDT3045VCT
STMicroelectronics