VS-1N1190A
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 40A DO203AB
$0.00
Available to order
Reference Price (USD)
1+
$8.40000
10+
$7.58500
100+
$6.27980
500+
$5.46840
1,000+
$4.93920
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the VS-1N1190A single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the VS-1N1190A delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's VS-1N1190A is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 126 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.5 mA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 200°C
Related Products
Vishay General Semiconductor - Diodes Division
8EWS12STRL
NXP USA Inc.
PMEG4005EGW115
Taiwan Semiconductor Corporation
SF46GHB0G
Diodes Incorporated
B0530WS-7-G
Taiwan Semiconductor Corporation
SS24LHRTG
Vishay General Semiconductor - Diodes Division
SD153R08S10PV
Vishay General Semiconductor - Diodes Division
EGP30B-E3/54
Diodes Incorporated
SBL840
Vishay General Semiconductor - Diodes Division
VS-8EWF02STRPBF
Infineon Technologies