VS-1N1200RA
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 12A DO203AA
$0.00
Available to order
Reference Price (USD)
1+
$4.60000
10+
$4.13200
100+
$3.38520
500+
$2.88176
1,000+
$2.43040
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-1N1200RA from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the VS-1N1200RA meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.5 mA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 200°C
Related Products
Taiwan Semiconductor Corporation
ES3G R7G
Taiwan Semiconductor Corporation
SF2007GHC0G
Vishay General Semiconductor - Diodes Division
RS3BHE3/9AT
Taiwan Semiconductor Corporation
S15JCHR7G
onsemi
MUR550APFG
Rohm Semiconductor
RFN5B6STL
Taiwan Semiconductor Corporation
SF32GHA0G
Rohm Semiconductor
RB050LA-40GTR
Taiwan Semiconductor Corporation
1N5819HA0G
Taiwan Semiconductor Corporation