VS-1N3767
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 900V 35A DO203AB
$0.00
Available to order
Reference Price (USD)
100+
$9.33010
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the VS-1N3767 single rectifier diode by Vishay General Semiconductor - Diodes Division. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The VS-1N3767 is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Vishay General Semiconductor - Diodes Division's VS-1N3767 for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900 V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 110 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 900 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 190°C
Related Products
Taiwan Semiconductor Corporation
SS310LHRHG
Rohm Semiconductor
RB521G-40FHT2R
Taiwan Semiconductor Corporation
1N4001G A0G
Taiwan Semiconductor Corporation
SFA807GHC0G
onsemi
SURS8260T3G
STMicroelectronics
STPS2L60RL
Taiwan Semiconductor Corporation
ES1BL RFG
Microchip Technology
JAN1N6857-1/TR
Diodes Incorporated
S2JA-13
Bourns Inc.