VS-1N5820TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 3A DO201AD
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-1N5820TR by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The VS-1N5820TR is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the VS-1N5820TR delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 mA @ 20 V
- Capacitance @ Vr, F: 350pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD (C-16)
- Operating Temperature - Junction: -65°C ~ 150°C
Related Products
Taiwan Semiconductor Corporation
SFA804G
onsemi
FES16HTR
Taiwan Semiconductor Corporation
ES2BAHR3G
Vishay General Semiconductor - Diodes Division
BY229B-600HE3/45
Vishay General Semiconductor - Diodes Division
SS19-M3/5AT
onsemi
MBR1080G
Vishay General Semiconductor - Diodes Division
V20150SHM3/4W
Taiwan Semiconductor Corporation
HS3F R7G
Taiwan Semiconductor Corporation
RSFMLHRFG
Infineon Technologies