VS-20ETF12FP-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO220FP
$2.12
Available to order
Reference Price (USD)
1+
$6.26000
50+
$5.39380
100+
$4.68340
500+
$4.07820
1,000+
$3.68354
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-20ETF12FP-M3 by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The VS-20ETF12FP-M3 is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the VS-20ETF12FP-M3 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 400 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220-2 Full Pack
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
VS-1ENH02HM3/85A
Microchip Technology
5819SMJ/TR13
Vishay General Semiconductor - Diodes Division
RMPG06D-E3/54
UnitedSiC
UJ3D1250K2
onsemi
NSR0230P2T5G
Taiwan Semiconductor Corporation
SR315
Panjit International Inc.
PG1010R_AY_00001
Diodes Incorporated
S5GC-13-F
GeneSiC Semiconductor
GC20MPS12-220
onsemi