Shopping cart

Subtotal: $0.00

VS-3EGH06-M3/5BT

Vishay General Semiconductor - Diodes Division
VS-3EGH06-M3/5BT Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A SMB
$0.18
Available to order
Reference Price (USD)
3,200+
$0.18868
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Rohm Semiconductor

RFN3BM6SFHTL

Diotec Semiconductor

BYG10M-CT

Rohm Semiconductor

BAS116HYT116

Vishay General Semiconductor - Diodes Division

BYT52G-TR

Central Semiconductor Corp

CMR1U-04FL TR13 PBFREE

Nexperia USA Inc.

1N4531,143

Microchip Technology

1N6620

Rohm Semiconductor

SCS208AJHRTLL

Taiwan Semiconductor Corporation

SK14B

Microchip Technology

1N5822US

Top