VS-4EVH02-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 200V SLIMDPAK
$0.65
Available to order
Reference Price (USD)
4,500+
$0.24172
9,000+
$0.22814
13,500+
$0.22135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-4EVH02-M3/I from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's VS-4EVH02-M3/I for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 3 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Diotec Semiconductor
SKL18
Micro Commercial Co
SK26HE3-LTP
Micro Commercial Co
BAS20-TP
Diodes Incorporated
SBR05U20LPS-7
Vishay General Semiconductor - Diodes Division
VSSA310S-E3/61T
Taiwan Semiconductor Corporation
FR103G R0G
Panjit International Inc.
ERT2GF_R1_00001
Vishay General Semiconductor - Diodes Division
VS-2ENH02-M3/85A
IXYS
DHG10I1800PA
NTE Electronics, Inc