Shopping cart

Subtotal: $0.00

VS-6EWX06FNTR-M3

Vishay General Semiconductor - Diodes Division
VS-6EWX06FNTR-M3 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 6A DPAK
$0.38
Available to order
Reference Price (USD)
2,000+
$0.38691
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 19 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Global Power Technology-GPT

G3S06503C

Vishay General Semiconductor - Diodes Division

RMPG06J-E3/100

Panjit International Inc.

RB720M-30_R1_00001

Vishay General Semiconductor - Diodes Division

GP02-40-E3/54

Vishay General Semiconductor - Diodes Division

SSC53L-E3/57T

Microchip Technology

JANTX1N4148-1

Vishay General Semiconductor - Diodes Division

VS-25FR100M

Panjit International Inc.

BX35_R1_00001

STMicroelectronics

STPSC10065D

Top