VS-8ETH03-1-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO262AA
$1.27
Available to order
Reference Price (USD)
1+
$1.16000
50+
$0.98000
100+
$0.80500
500+
$0.66500
1,000+
$0.52500
2,500+
$0.49000
Exquisite packaging
Discount
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The VS-8ETH03-1-M3 from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the VS-8ETH03-1-M3 meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 300 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262AA
- Operating Temperature - Junction: -65°C ~ 175°C
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