VS-8EWH02FN-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO252
$1.03
Available to order
Reference Price (USD)
1+
$0.99000
75+
$0.82853
150+
$0.68667
525+
$0.55482
1,050+
$0.45530
2,550+
$0.41798
5,025+
$0.40554
Exquisite packaging
Discount
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Upgrade your electronic systems with the VS-8EWH02FN-M3 single rectifier diode by Vishay General Semiconductor - Diodes Division. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The VS-8EWH02FN-M3 is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Vishay General Semiconductor - Diodes Division's VS-8EWH02FN-M3 for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 24 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- Operating Temperature - Junction: -65°C ~ 175°C
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