VS-8EWS10S-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 8A DPAK
$0.50
Available to order
Reference Price (USD)
3,000+
$0.48900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-8EWS10S-M3 from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the VS-8EWS10S-M3 meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Taiwan Semiconductor Corporation
S1KLSHRVG
onsemi
MURA260T3G
Central Semiconductor Corp
CMIDSH1-3 TR PBFREE
Vishay General Semiconductor - Diodes Division
B350B-M3/52T
Nexperia USA Inc.
PMEG2002AESFBYL
Diodes Incorporated
ES2DA-13-F
Vishay General Semiconductor - Diodes Division
VS-8EWH02FNTRR-M3
Solid State Inc.
MR1128R
Micro Commercial Co
1N4148WX-TP
Diotec Semiconductor