Shopping cart

Subtotal: $0.00

VS-E4TU2006FP-N3

Vishay General Semiconductor - Diodes Division
VS-E4TU2006FP-N3 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 20A TO220-2
$1.11
Available to order
Reference Price (USD)
1+
$1.07000
50+
$0.92260
100+
$0.77040
500+
$0.64860
1,000+
$0.52679
2,500+
$0.49634
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.63 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 61 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full Pack
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

BAT86S-TAP

GeneSiC Semiconductor

MBRH120100

Diodes Incorporated

SBR8E60P5-7D

Taiwan Semiconductor Corporation

RS2DA R3G

Diodes Incorporated

1N4937G-T

onsemi

1N4447

Vishay General Semiconductor - Diodes Division

1N4383GP-E3/54

Vishay General Semiconductor - Diodes Division

MPG06K-E3/100

NXP USA Inc.

BAS21/MI,235

Comchip Technology

CDBQC0140L-HF

Top