VS-E7MH0112HM3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
1A, 1200V GENERATION 7 FRED HYPE
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
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The VS-E7MH0112HM3/I by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The VS-E7MH0112HM3/I is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the VS-E7MH0112HM3/I delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 175°C
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