VS-FB190SA10
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 190A SOT227
$0.00
Available to order
Reference Price (USD)
1+
$28.94000
10+
$26.69100
30+
$25.49167
100+
$22.79260
250+
$21.74288
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the VS-FB190SA10 from Vishay General Semiconductor - Diodes Division, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the VS-FB190SA10 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay General Semiconductor - Diodes Division's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 190A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
- Vgs(th) (Max) @ Id: 4.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
Related Products
Vishay Siliconix
IRLIZ34G
Diodes Incorporated
ZVP3310ASTOB
Microchip Technology
APT50MC120JCU2
Infineon Technologies
IRL5602L
NXP USA Inc.
PMV45EN2215
Infineon Technologies
IRFR3710ZTRR
Infineon Technologies
SPU21N05L
Infineon Technologies
IPD50R399CP
IXYS
IXTN79N20
Nexperia USA Inc.