VS-FC420SA15
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MOSFET N-CH 150V 400A SOT227
$26.41
Available to order
Reference Price (USD)
1+
$24.92000
10+
$22.98000
30+
$21.94700
100+
$19.62320
250+
$18.71952
500+
$17.81580
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the VS-FC420SA15 by Vishay General Semiconductor - Diodes Division, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the VS-FC420SA15 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.75mOhm @ 200A, 10V
- Vgs(th) (Max) @ Id: 5.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 909W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
Related Products
STMicroelectronics
STFI15NM65N
IXYS
IXFJ80N25X3
Vishay Siliconix
SQJQ150E-T1_GE3
Toshiba Semiconductor and Storage
TPH8R008NH,L1Q
Infineon Technologies
BF5020WH6327
Vishay Siliconix
SIR616DP-T1-GE3
Rohm Semiconductor
RUE003N02TL
STMicroelectronics
STI16N65M5
Diotec Semiconductor
MMFTN3402
Fairchild Semiconductor