VS-FC80NA20
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 108A SOT227
$0.00
Available to order
Reference Price (USD)
160+
$27.52444
Exquisite packaging
Discount
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Upgrade your designs with the VS-FC80NA20 by Vishay General Semiconductor - Diodes Division, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the VS-FC80NA20 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 405W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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